| PART |
Description |
Maker |
| MS2176 |
RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
|
ADPOW[Advanced Power Technology]
|
| 2SC3120 E000792 SC3120 |
TRANSISTOR (TV TUNER/ UHF MIXER/ VHF~UHF BAND RF AMPLIFIER APPLICATIONS)
TRANSISTOR (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS)
TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| HN3C02FU E002001 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF CONVERTER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3547B E000855 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR APPLICATIONS)(COMMON COLLECTOR)
From old datasheet system
TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON COLLECTOR)
|
Toshiba Semiconductor
|
| 2SC234703 2SC2347 |
Transistor Silicon NPN Epitaxial Planar Type TV UHF Oscillator Applications TV VHF Mixer Applications
|
Toshiba Semiconductor
|
| HVV1012-100 |
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Applications
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications
|
HVVi Semiconductors, Inc.
|
| 1SV249 |
PIN Diode for VHF, UHF, AGC Applications Silicon Epitaxial Type
PIN Diode for VHF/ UHF/ AGC Applications
|
Sanyo Semicon Device
|
| HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
